Infineon IPD Type N-Channel MOSFET, 180 A, 100 V N, 3-Pin TO-252

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We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
RS-stocknr.:
244-0877
Fabrikantnummer:
IPD50N10S3L16ATMA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.7mΩ

Channel Mode

N

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon MOSFET OptiMOSTM Power Transistor is a Green product RoHS compliant and is Automotive AEC Q101 qualified.

N-channel - Enhancement mode

MSL1 up to 260°C peak reflow

175°C operating temperature

100% Avalanche tested

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