Infineon BSC N-Channel MOSFET, 381 A, 40 V N, 8-Pin SuperSO8 5 x 6 BSC0906NSATMA1

RS-stocknr.:: 243-9310
Fabrikantnummer:: BSC0906NSATMA1
Fabrikant:: Infineon

Infineon BSC N-Channel MOSFET, 381 A, 40 V N, 8-Pin SuperSO8 5 x 6 BSC0906NSATMA1

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250 - 490	€ 0,428	€ 4,28
500 +	€ 0,406	€ 4,06

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RS-stocknr.:: 243-9310
Fabrikantnummer:: BSC0906NSATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	381A
	Maximum Drain Source Voltage Vds	40V
	Package Type	SuperSO8 5 x 6
	Series	BSC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.7mΩ
	Channel Mode	N
	Maximum Power Dissipation Pd	81W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1V
	Maximum Operating Temperature	+150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 381A
	Maximum Drain Source Voltage Vds 40V
	Package Type SuperSO8 5 x 6
	Series BSC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.7mΩ
	Channel Mode N
	Maximum Power Dissipation Pd 81W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1V
	Maximum Operating Temperature +150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - BSC0906NSATMA1

Infineon BSC Series MOSFET, 40V Maximum Drain Source Voltage, 381A Maximum Continuous Drain Current - BSC0906NSATMA1

This MOSFET is a surface-mount N-channel transistor designed to switch and control high currents in power electronic circuits. It operates across a broad temperature range and is intended for applications requiring substantial continuous drain current and elevated power handling in a Compact package.

Features and Benefits:

• 381 A continuous drain current enabling high-current switching
• 81 W power dissipation for sustained thermal load handling
• 0.7 mΩ RDS(on) minimising conduction losses during operation
• 40 V drain-source rating supporting medium-voltage systems
• 80 nC gate charge facilitating predictable switching control

Applications

• Suitable for high-current DC-DC converter stages
• Used for synchronous rectification in power modules
• Ideal for motor drive output stages requiring large currents
• Can be used for server power distribution and VRM designs
• Useful in Compact surface-mount power assemblies

What gate voltage range can be applied safely?

Gate drive must not exceed 20 V between gate and source to avoid damaging the gate oxide.

What ambient temperature extremes can it tolerate in operation?

It is specified to operate from −55 °C up to +150 °C, allowing use in wide-temperature environments.

How does the package affect mounting and the thermal path?

The device is supplied in a SuperSO8 package sized 5 x 6 mm for surface mounting, offering a short conduction path to PCB thermal planes.

What is the forward voltage relevant to conduction scenarios?

The forward voltage is 1 V, relevant when assessing voltage drop in rectification or low-side conduction contexts.