Infineon iPB Type N-Channel MOSFET, 273 A, 100 V P, 3-Pin TO-263 IPB020N08N5ATMA1
- RS-stocknr.:
- 243-9266
- Fabrikantnummer:
- IPB020N08N5ATMA1
- Fabrikant:
- Infineon
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*prijsindicatie
- RS-stocknr.:
- 243-9266
- Fabrikantnummer:
- IPB020N08N5ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 273A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | iPB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | P | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 273A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series iPB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode P | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon N-channel power MOSFET is an ideal for high frequency switching. It has an excellent gate charge product (FOM). It typically provided in D2PAK package system. The drain current and drain-source voltage of power MOSFET is 173 A and 80 V respec
300 W power dissipation
Surface mount
Optimized for synchronous rectification
Output capacitance reduction of up to 44 %
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