Infineon iPB Type N-Channel MOSFET, 273 A, 100 V N, 3-Pin TO-263 IPB60R070CFD7ATMA1
- RS-stocknr.:
- 242-5830
- Fabrikantnummer:
- IPB60R070CFD7ATMA1
- Fabrikant:
- Infineon
Subtotaal (1 eenheid)*
€ 3,89
(excl. BTW)
€ 4,71
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending 970 stuk(s) vanaf 05 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 + | € 3,89 |
*prijsindicatie
- RS-stocknr.:
- 242-5830
- Fabrikantnummer:
- IPB60R070CFD7ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 273A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | iPB | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 81W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 273A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series iPB | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 81W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- MY
The Infineon Super junction MOSFET in D2PAK package is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations, where it enables significant efficiency improvements. As successor to the CFD2 SJ MOSFET family it comes with reduced gate charge, improved turn-off behaviour and up to 69% reduced reverse recovery charge compared to competitors.
Ultra-fast body diode
Best-in-class reverse recovery charge (Qrr)
Improved reverse diode dv/dt and dif/dt ruggedness
Lowest FOM RDS(on) x Qg and EOSS
Excellent hard commutation ruggedness
Gerelateerde Links
- Infineon iPB Type N-Channel MOSFET, 273 A, 100 V N, 3-Pin TO-263
- Infineon iPB Type N-Channel MOSFET, 273 A, 100 V N, 7-Pin TO-263
- Infineon iPB Type N-Channel MOSFET, 273 A, 100 V N, 3-Pin TO-263 IPB048N15N5LFATMA1
- Infineon iPB Type N-Channel MOSFET, 273 A, 100 V N, 3-Pin TO-263 IPB110N20N3LFATMA1
- Infineon iPB Type N-Channel MOSFET, 273 A, 100 V N, 3-Pin TO-263 IPB60R045P7ATMA1
- Infineon iPB Type N-Channel MOSFET, 273 A, 100 V N, 3-Pin TO-263 IPB048N15N5ATMA1
- Infineon iPB Type N-Channel MOSFET, 273 A, 100 V N, 7-Pin TO-263 IPB017N10N5ATMA1
- Infineon iPB Type P-Channel MOSFET, 273 A, 100 V N, 3-Pin TO-263