Infineon IAUC Type N-Channel MOSFET, 120 A, 40 V Enhancement, 8-Pin SuperSO8 5 x 6 IAUC100N10S5L040ATMA1
- RS-stocknr.:
- 242-0303
- Fabrikantnummer:
- IAUC100N10S5L040ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 5,66
(excl. BTW)
€ 6,84
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 4.442 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 2,83 | € 5,66 |
| 20 - 48 | € 2,52 | € 5,04 |
| 50 - 98 | € 2,35 | € 4,70 |
| 100 - 198 | € 2,215 | € 4,43 |
| 200 + | € 2,035 | € 4,07 |
*prijsindicatie
- RS-stocknr.:
- 242-0303
- Fabrikantnummer:
- IAUC100N10S5L040ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SuperSO8 5 x 6 | |
| Series | IAUC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SuperSO8 5 x 6 | ||
Series IAUC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS-5 Power-Transistor is a N channel MOSFET. It is 100% avalanche tested.
Feasible for automatic optical inspection (AOI)
AEC qualified
Gerelateerde Links
- Infineon IAUC Type N-Channel MOSFET, 120 A, 40 V Enhancement, 8-Pin SuperSO8 5 x 6
- Infineon IAUC Type N-Channel MOSFET, 120 A, 40 V Enhancement, 8-Pin SuperSO8 5 x 6 IAUC120N04S6N006ATMA1
- Infineon IAUC Type N-Channel MOSFET, 120 A, 40 V Enhancement, 8-Pin SuperSO8 5 x 6 IAUC120N04S6L005ATMA1
- Infineon IAUC Type N-Channel MOSFET, 80 A, 40 V Enhancement, 8-Pin SuperSO8 5 x 6
- Infineon IAUC Type N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin SuperSO8 5 x 6
- Infineon IAUC Type N-Channel MOSFET, 80 A, 40 V Enhancement, 8-Pin SuperSO8 5 x 6 IAUC80N04S6L032ATMA1
- Infineon IAUC Type N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin SuperSO8 5 x 6 IAUC100N04S6L014ATMA1
- Infineon IAUC Type N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin SuperSO8 5 x 6 IAUC100N04S6L025ATMA1