Microchip MSC35SMA170B Type N-Channel MOSFET, 140 A, 12 V TO-247 MSC035SMA170B
- RS-stocknr.:
- 241-9261
- Fabrikantnummer:
- MSC035SMA170B
- Fabrikant:
- Microchip
Subtotaal (1 eenheid)*
€ 30,71
(excl. BTW)
€ 37,16
(incl. BTW)
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- Plus verzending 165 stuk(s) vanaf 07 januari 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 + | € 30,71 |
*prijsindicatie
- RS-stocknr.:
- 241-9261
- Fabrikantnummer:
- MSC035SMA170B
- Fabrikant:
- Microchip
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Microchip | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 140A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Series | MSC35SMA170B | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 8Ω | |
| Maximum Gate Source Voltage Vgs | 2 V | |
| Maximum Power Dissipation Pd | 1.6W | |
| Forward Voltage Vf | 1.8V | |
| Typical Gate Charge Qg @ Vgs | 178nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Microchip | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 140A | ||
Maximum Drain Source Voltage Vds 12V | ||
Series MSC35SMA170B | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 8Ω | ||
Maximum Gate Source Voltage Vgs 2 V | ||
Maximum Power Dissipation Pd 1.6W | ||
Forward Voltage Vf 1.8V | ||
Typical Gate Charge Qg @ Vgs 178nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Microchip silicon carbide power MOSFET product line from Micro semi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high voltage applications.
Low capacitances and low gate charge
Fast switching speed due to low internal gate resistance
Stable operation at high junction temperature TJ(max) equal to 175 °C
Fast and reliable body diode
Superior avalanche ruggedness
RoHS compliant
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