Microchip MSC025SMA120B4 Type N-Channel MOSFET, 140 A, 12 V, 4-Pin TO-247
- RS-stocknr.:
- 241-9251P
- Fabrikantnummer:
- MSC025SMA120B4
- Fabrikant:
- Microchip
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Aantal stuks | Per stuk |
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*prijsindicatie
- RS-stocknr.:
- 241-9251P
- Fabrikantnummer:
- MSC025SMA120B4
- Fabrikant:
- Microchip
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Microchip | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 140A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | TO-247 | |
| Series | MSC025SMA120B4 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 8Ω | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.8V | |
| Typical Gate Charge Qg @ Vgs | 232nC | |
| Maximum Power Dissipation Pd | 1.6W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Microchip | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 140A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type TO-247 | ||
Series MSC025SMA120B4 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 8Ω | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.8V | ||
Typical Gate Charge Qg @ Vgs 232nC | ||
Maximum Power Dissipation Pd 1.6W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Microchip silicon carbide power MOSFET product line from Micro semi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high voltage applications. The MSC025SMA120B4 device is a 1200 V 25 mΩ Sic MOSFET in a TO 247 4 lead package with a source sense.
Low capacitances and low gate charge
Fast switching speed due to low internal gate resistance
Stable operation at high junction temperature T equal to 175 °C
Fast and reliable body diode
Superior avalanche ruggedness
RoHS compliant