N-Channel MOSFET, 200 A, 50 V, 4-Pin LFPAK56E Nexperia PSMN1R5-50YLHX
- RS-stocknr.:
- 240-1973
- Fabrikantnummer:
- PSMN1R5-50YLHX
- Fabrikant:
- Nexperia
1490 op voorraad - levertijd is 4 werkdag(en).
Prijs Per stuk (in een verpakking 2)
€ 3,77
(excl. BTW)
€ 4,56
(incl. BTW)
Aantal stuks | Per stuk | Per pak* |
---|---|---|
2 - 48 | € 3,77 | € 7,54 |
50 - 98 | € 3,39 | € 6,78 |
100 - 248 | € 2,78 | € 5,56 |
250 - 498 | € 2,725 | € 5,45 |
500 + | € 2,37 | € 4,74 |
*prijsindicatie
- RS-stocknr.:
- 240-1973
- Fabrikantnummer:
- PSMN1R5-50YLHX
- Fabrikant:
- Nexperia
Datasheets
Wetgeving en conformiteit
Productomschrijving
The Nexperia MOSFET is in LFPAK56E package with 200 Amp continuous current, logic level gate drive and N-channel enhancement mode. The ASFET is particularly suited to 36 V battery powered applications requiring strong avalanche capability, linear mode per
LFPAK56E low-stress exposed lead-frame for ultimate reliability, optimum soldering and easy solder-joint inspection
Copper-clip and solder die attach for low package inductance and resistance, and high ID (max) rating
Qualified to 175 °C
Avalanche rated, 100% tested
Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies
Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for low EMI designs
Copper-clip and solder die attach for low package inductance and resistance, and high ID (max) rating
Qualified to 175 °C
Avalanche rated, 100% tested
Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies
Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for low EMI designs
Specificaties
Kenmerk | Waarde |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 200 A |
Maximum Drain Source Voltage | 50 V |
Package Type | LFPAK56E |
Mounting Type | Surface Mount |
Pin Count | 4 |
Number of Elements per Chip | 1 |