Vishay Type N-Channel MOSFET, 445 A, 30 V Depletion, 4-Pin PowerPAK (8x8L) SQJQ112E-T1_GE3
- RS-stocknr.:
- 239-8676
- Fabrikantnummer:
- SQJQ112E-T1_GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 8,45
(excl. BTW)
€ 10,224
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tekort aan aanbod
- 1.760 stuk(s) klaar voor verzending vanaf een andere locatie
Onze huidige voorraad is beperkt en onze leveranciers verwachten tekorten.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 4,225 | € 8,45 |
| 20 - 48 | € 3,965 | € 7,93 |
| 50 - 98 | € 3,595 | € 7,19 |
| 100 - 198 | € 3,38 | € 6,76 |
| 200 + | € 3,175 | € 6,35 |
*prijsindicatie
- RS-stocknr.:
- 239-8676
- Fabrikantnummer:
- SQJQ112E-T1_GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 445A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK (8x8L) | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.00253Ω | |
| Channel Mode | Depletion | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 255W | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 43nC | |
| Maximum Operating Temperature | 125°C | |
| Width | 4.9 mm | |
| Length | 6.15mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 445A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK (8x8L) | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.00253Ω | ||
Channel Mode Depletion | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 255W | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 43nC | ||
Maximum Operating Temperature 125°C | ||
Width 4.9 mm | ||
Length 6.15mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay TrenchFET® is automotive Gen IV power N-Channel MOSFET which operates at 100 V and 175 °C temperature. This MOSFET used for high power density.
AEC-Q101 qualified
UIS tested
Thin package
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