Vishay E Type N-Channel Power MOSFET, 21 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK125N60E-T1-GE3

Subtotaal (1 rol van 2000 eenheden)*

€ 4.588,00

(excl. BTW)

€ 5.552,00

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Op voorraad
  • 2.000 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks
Per stuk
Per rol*
2000 +€ 2,294€ 4.588,00

*prijsindicatie

RS-stocknr.:
239-8637
Fabrikantnummer:
SIHK125N60E-T1-GE3
Fabrikant:
Vishay
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Vishay

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

650V

Package Type

PowerPAK 10 x 12

Series

E

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.109Ω

Channel Mode

Depletion

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

54nC

Maximum Power Dissipation Pd

132W

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

30V

Maximum Operating Temperature

+150°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

Vishay Series E Power MOSFET, 650V Drain Source Voltage, 21A Continuous Drain Current - SIHK125N60E-T1-GE3


This power MOSFET is a high-voltage N-channel switch designed for demanding power-conversion and automotive environments. It operates across an extended ambient range and is supplied in a compact surface-mount PowerPAK 10x12 package suited to dense board layouts. The device supports robust gate drive conditions and is manufactured to meet industry lead-free environmental requirements.

Features and Benefits:


• 650V drain capability enabling high-voltage system designs
• 21A continuous drain current supporting substantial load currents
• Low Rds(on) 0.109Ω reducing conduction losses in power stages
• 132W power dissipation allowing higher thermal headroom
• Gate tolerance up to 30V permitting aggressive drive schemes
• Typical gate charge 54nC for fast switching transitions

Applications


• Suitable for high-voltage DC-DC converters in industrial systems
• Ideal for on-board automotive power distribution modules
• Used with motor-drive stages requiring high-voltage switching
• Can be used for power supplies in telecommunications equipment
• Suitable for half-bridge and synchronous-rectifier implementations

What thermal conditions can it withstand in harsh environments?


It is specified to operate between -55°C and +150°C, enabling use across extreme temperature ranges found in automotive and industrial settings.

How does the package influence mounting and assembly?


The PowerPAK 10x12 surface-mount format offers a low-profile footprint that facilitates automated placement and efficient PCB real-estate usage.

Is this device suitable for automotive qualification workflows?


It complies with the AEC-Q101 automotive standard, making it appropriate for vehicle electronics that require component-level automotive qualification.

What conduction and switching trade-offs should designers expect?


Expect a balance between moderate gate charge and low Rds(on), providing reduced conduction loss while maintaining reasonably fast switching for many power-electronics topologies.

Gerelateerde Links

Wees als eerste op de hoogte van onze nieuwste producten en aanbiedingen

E-mailadres

De persoonlijke gegevens die u aan ons verstrekt bij het aanmelden voor deze mailinglijst worden verwerkt in overeenstemming met ons privacybeleid.