Vishay Type N-Channel MOSFET, 90.5 A, 100 V Depletion, 8-Pin PowerPAK SO-8DC SIDR104AEP-T1-RE3
- RS-stocknr.:
- 239-8613
- Fabrikantnummer:
- SIDR104AEP-T1-RE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 7,13
(excl. BTW)
€ 8,628
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 6.044 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 3,565 | € 7,13 |
| 20 - 98 | € 3,35 | € 6,70 |
| 100 - 198 | € 3,03 | € 6,06 |
| 200 - 498 | € 2,855 | € 5,71 |
| 500 + | € 2,675 | € 5,35 |
*prijsindicatie
- RS-stocknr.:
- 239-8613
- Fabrikantnummer:
- SIDR104AEP-T1-RE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 90.5A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerPAK SO-8DC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0021Ω | |
| Channel Mode | Depletion | |
| Maximum Power Dissipation Pd | 120W | |
| Typical Gate Charge Qg @ Vgs | 46.1nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 125°C | |
| Length | 6.15mm | |
| Standards/Approvals | No | |
| Width | 5.15 mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 90.5A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerPAK SO-8DC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0021Ω | ||
Channel Mode Depletion | ||
Maximum Power Dissipation Pd 120W | ||
Typical Gate Charge Qg @ Vgs 46.1nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 125°C | ||
Length 6.15mm | ||
Standards/Approvals No | ||
Width 5.15 mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay TrenchFET® is Gen IV power N-Channel MOSFET which operates at 100 V and 175°C temperature. This MOSFET used for power supply, motor drive control and synchronous rectification.
Very low resistance
UIS tested
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