Vishay E Type N-Channel Power MOSFET, 29 A, 600 V, 8-Pin PowerPAK 10 x 12 SIHK075N60E-T1-GE3

RS-stocknr.:: 239-5380
Fabrikantnummer:: SIHK075N60E-T1-GE3
Fabrikant:: Vishay

Vishay E Type N-Channel Power MOSFET, 29 A, 600 V, 8-Pin PowerPAK 10 x 12 SIHK075N60E-T1-GE3

Subtotaal (1 rol van 2000 eenheden)*

€ 6.888,00

(excl. BTW)

€ 8.334,00

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Op voorraad

2.000 stuk(s) klaar voor verzending vanaf een andere locatie

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per rol*
2000 +	€ 3,444	€ 6.888,00

*prijsindicatie

RS-stocknr.:: 239-5380
Fabrikantnummer:: SIHK075N60E-T1-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	29A
	Maximum Drain Source Voltage Vds	600V
	Series	E
	Package Type	PowerPAK 10 x 12
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.08Ω
	Typical Gate Charge Qg @ Vgs	41nC
	Maximum Gate Source Voltage Vgs	30V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	167W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 29A
	Maximum Drain Source Voltage Vds 600V
	Series E
	Package Type PowerPAK 10 x 12
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.08Ω
	Typical Gate Charge Qg @ Vgs 41nC
	Maximum Gate Source Voltage Vgs 30V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 167W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHK075N60E-T1-GE3

Vishay Series E Power MOSFET, 600V Drain Source Voltage, 29A Continuous Drain Current - SIHK075N60E-T1-GE3

This power MOSFET is a high-voltage, N‑channel semiconductor device designed for switching and power conversion in demanding electronic systems. It is suited to surface-mount applications where compact packaging and robust thermal performance are required, and complies with RoHS environmental restrictions.

Features and Benefits:

• 600V rating enables high-voltage switching capability
• 29A continuous drain current supports substantial load currents
• 0.08Ω Rds(on) delivers low conduction losses
• 167W power dissipation allows effective thermal handling
• 41nC typical gate charge permits controlled switching dynamics
• 30V gate tolerance provides broad gate-drive margin

Applications

• Suitable for industrial motor-drive inverters
• Used with power supplies for server and telecoms equipment
• Ideal for DC-DC converters in renewable energy systems
• Can be used for high-voltage switch controllers in instrumentation
• Suitable for LED lighting drivers requiring high-voltage switches

What mounting method is required for reliable electrical connection?

It is supplied in a low-profile PowerPAK 10x12 package intended for surface mounting to a PCB using solder pads for mechanical and thermal contact.

How wide is the operating temperature range for harsh environments?

The device is rated to operate from -55°C up to 150°C, allowing use across extreme ambient and elevated junction conditions.

What gate-drive considerations should be observed?

The maximum gate-source voltage is 30V, so gate-drive circuits must limit Vgs within this boundary and provide sufficient drive to achieve the specified gate charge of around 41nC.

How does the package support thermal dissipation?

The PowerPAK 10x12 format offers a thermal path through the package to the PCB, aiding the device in managing up to 167W of dissipation under appropriate board thermal design.