Toshiba Type N-Channel MOSFET, 6 A, 60 V, 3-Pin SOT-23 SSM3K341R,LF(T
- RS-stocknr.:
- 236-3580
- Fabrikantnummer:
- SSM3K341R,LF(T
- Fabrikant:
- Toshiba
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 25 eenheden)*
€ 9,90
(excl. BTW)
€ 11,975
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 150 stuk(s) klaar voor verzending vanaf een andere locatie
- Plus verzending 3.325 stuk(s) vanaf 07 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 25 | € 0,396 | € 9,90 |
| 50 - 75 | € 0,388 | € 9,70 |
| 100 - 225 | € 0,352 | € 8,80 |
| 250 - 975 | € 0,346 | € 8,65 |
| 1000 + | € 0,317 | € 7,93 |
*prijsindicatie
- RS-stocknr.:
- 236-3580
- Fabrikantnummer:
- SSM3K341R,LF(T
- Fabrikant:
- Toshiba
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 43mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2.4W | |
| Forward Voltage Vf | -0.9V | |
| Typical Gate Charge Qg @ Vgs | 9.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 0.8mm | |
| Length | 2.4mm | |
| Width | 2.9 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 43mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2.4W | ||
Forward Voltage Vf -0.9V | ||
Typical Gate Charge Qg @ Vgs 9.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 0.8mm | ||
Length 2.4mm | ||
Width 2.9 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Toshiba field effect transistor MADE up of the silicon material and having N channel MOS type. It is mainly used in power management switching applications.
Storage temperature range −55 to 150 °C
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