STMicroelectronics STHU36N Type N-Channel MOSFET, 29 A, 600 V, 7-Pin HU3PAK STHU36N60DM6AG
- RS-stocknr.:
- 234-8898
- Fabrikantnummer:
- STHU36N60DM6AG
- Fabrikant:
- STMicroelectronics
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€ 4,36
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| 10 - 99 | € 3,50 |
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| 250 - 499 | € 3,32 |
| 500 + | € 3,24 |
*prijsindicatie
- RS-stocknr.:
- 234-8898
- Fabrikantnummer:
- STHU36N60DM6AG
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | HU3PAK | |
| Series | STHU36N | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 99mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 210W | |
| Typical Gate Charge Qg @ Vgs | 46nC | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type HU3PAK | ||
Series STHU36N | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 99mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 210W | ||
Typical Gate Charge Qg @ Vgs 46nC | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics high-voltage N-channel power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
AEC-Q101 qualified
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
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