Infineon BSZ Type N-Channel MOSFET, 40 A, 100 V N, 8-Pin TSDSON-8 FL BSZ0803LSATMA1
- RS-stocknr.:
- 234-6991
- Fabrikantnummer:
- BSZ0803LSATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 7,44
(excl. BTW)
€ 9,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Laatste voorraad RS
- Laatste 4.995 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 1,488 | € 7,44 |
| 50 - 120 | € 1,414 | € 7,07 |
| 125 - 245 | € 1,324 | € 6,62 |
| 250 - 495 | € 1,236 | € 6,18 |
| 500 + | € 1,144 | € 5,72 |
*prijsindicatie
- RS-stocknr.:
- 234-6991
- Fabrikantnummer:
- BSZ0803LSATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TSDSON-8 FL | |
| Series | BSZ | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 20.8mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 52W | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 7.6nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.1 mm | |
| Length | 5.35mm | |
| Height | 1.2mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TSDSON-8 FL | ||
Series BSZ | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 20.8mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 52W | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 7.6nC | ||
Maximum Operating Temperature 150°C | ||
Width 6.1 mm | ||
Length 5.35mm | ||
Height 1.2mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon OptiMOS™ PD N-channel power MOSFET targets USB-PD and adapter applications. The product offers fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction and features quality products in compact, lightweight packages. It has 40A maximum continuous drain current and 100V maximum drain source voltage It is Ideal for high-frequency switching and optimized for chargers.
Logic level availability
Low on-state resistance RDS(on)
Low gate, output and reverse recovery charge
Excellent thermal behaviour
100% avalanche tested
Pb-free lead plating
Halogen-freeaccordingtoIEC61249-2-21
RoHS compliant
Available in 2 small standard packages
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