Infineon OptiMOS 5 Type N-Channel MOSFET, 71 A, 100 V, 8-Pin SO-8 ISC0805NLSATMA1
- RS-stocknr.:
- 232-6765
- Fabrikantnummer:
- ISC0805NLSATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 2 eenheden)*
€ 1,39
(excl. BTW)
€ 1,682
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- 1.984 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 0,695 | € 1,39 |
| 20 - 48 | € 0,63 | € 1,26 |
| 50 - 98 | € 0,58 | € 1,16 |
| 100 - 198 | € 0,545 | € 1,09 |
| 200 + | € 0,50 | € 1,00 |
*prijsindicatie
- RS-stocknr.:
- 232-6765
- Fabrikantnummer:
- ISC0805NLSATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 71A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | OptiMOS 5 | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 10.7mΩ | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Maximum Power Dissipation Pd | 74W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.35mm | |
| Standards/Approvals | No | |
| Width | 1.2mm | |
| Length | 6.1mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 71A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series OptiMOS 5 | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 10.7mΩ | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Maximum Power Dissipation Pd 74W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Height 5.35mm | ||
Standards/Approvals No | ||
Width 1.2mm | ||
Length 6.1mm | ||
Automotive Standard No | ||
The Infineon's OptiMOS PD power MOSFET 100 V, are designed targeting USB-PD and adapter applications. It's SuperSO8 package offers fast ramp-up and optimized lead times. OptiMOS low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS PD features quality products in compact, lightweight packages.
Logic level availability
Excellent thermal behaviour
100% avalanche tested
Gerelateerde Links
- Infineon OptiMOS 5 Type N-Channel MOSFET, 71 A, 100 V, 8-Pin SO-8
- Infineon OptiMOS 5 Type N-Channel MOSFET, 37 A, 100 V, 8-Pin SO-8
- Infineon OptiMOS 5 Type N-Channel MOSFET, 135 A, 60 V, 8-Pin SO-8
- Infineon OptiMOS 5 Type N-Channel MOSFET, 59 A, 100 V, 8-Pin SO-8
- Infineon OptiMOS 5 Type N-Channel MOSFET, 97 A, 100 V, 8-Pin SO-8
- Infineon OptiMOS 5 Type N-Channel MOSFET, 57 A, 60 V, 8-Pin SO-8
- Infineon OptiMOS 5 Type N-Channel MOSFET, 150 A, 100 V, 8-Pin SO-8
- Infineon OptiMOS 5 Type N-Channel MOSFET, 66 A, 80 V, 8-Pin SO-8