onsemi SUPERFET V Type N-Channel MOSFET, 33 A, 600 V Enhancement, 3-Pin TO-247

Subtotaal (1 tube van 450 eenheden)*

€ 1.409,40

(excl. BTW)

€ 1.705,50

(incl. BTW)

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  • Verzending vanaf 25 juni 2026
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Aantal stuks
Per stuk
Per tube*
450 +€ 3,132€ 1.409,40

*prijsindicatie

RS-stocknr.:
230-9088
Fabrikantnummer:
NTHL099N60S5
Fabrikant:
onsemi
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Merk

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

33A

Maximum Drain Source Voltage Vds

600V

Series

SUPERFET V

Package Type

TO-247

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

99mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

48nC

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

184W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

41.07mm

Length

15.87mm

Width

4.82 mm

Automotive Standard

No

The ON Semiconductor series SUPERFET V MOSFET is the fifth generation high voltage super−junction (SJ) MOSFET family from ON Semiconductor. SUPERFET V delivers best−in−class FOMs (RDS(ON)·QG and RDS(ON)·EOSS) to improve not only heavy load but also light load efficiency. The 600 V SUPERET V series provides design benefits through reduced conduction and switching losses, while supporting extreme MOSFET dVDS/dt ratings at 120 V/ns and high body diode dVDS/dt ratings at 50 V/ns. Consequently, the SUPERFET V MOSFET Easy Drive series combines excellent switching performance without sacrificing ease of use for both hard and soft switching topologies. It helps manage EMI issues and allows for easier design implementation with excellent system efficiency.

Ultra Low Gate Charge (Typ. Qg= 48 nC)

Low switching loss

Low Time Related Output Capacitance (Typ. Coss(tr.)= 642 pF)

Low switching loss

Optimized Capacitance

Lower peak Vds and lower Vgs oscillation

650 V @ TJ = 150°C

Typ. RDS(on) = 79.2 m Ω

100% Avalanche Tested

RoHS Compliant

Internal Gate Resistance: 6.9 Ω

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