STMicroelectronics Single RF3L Type N-Channel MOSFET, 90 V Enhancement, 5-Pin LBB RF3L05250CB4
- RS-stocknr.:
- 230-0090
- Fabrikantnummer:
- RF3L05250CB4
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 eenheid)*
€ 173,56
(excl. BTW)
€ 210,01
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- Plus verzending 20 stuk(s) vanaf 01 juni 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 1 | € 173,56 |
| 2 - 4 | € 170,27 |
| 5 + | € 168,19 |
*prijsindicatie
- RS-stocknr.:
- 230-0090
- Fabrikantnummer:
- RF3L05250CB4
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Drain Source Voltage Vds | 90V | |
| Series | RF3L | |
| Package Type | LBB | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Channel Mode | Enhancement | |
| Maximum Operating Temperature | 200°C | |
| Transistor Configuration | Single | |
| Height | 4.85mm | |
| Standards/Approvals | RoHS | |
| Length | 28.95mm | |
| Automotive Standard | No | |
| Typical Power Gain | 18dB | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Drain Source Voltage Vds 90V | ||
Series RF3L | ||
Package Type LBB | ||
Mount Type Surface | ||
Pin Count 5 | ||
Channel Mode Enhancement | ||
Maximum Operating Temperature 200°C | ||
Transistor Configuration Single | ||
Height 4.85mm | ||
Standards/Approvals RoHS | ||
Length 28.95mm | ||
Automotive Standard No | ||
Typical Power Gain 18dB | ||
The STMicroelectronics RF3L05250CB4 is a 250 W 28/32 V LDMOS FET designed for wide-band communication and ISM applications with frequencies from HF to 1 GHz. It can be used in class AB/B and C for all typical modulation formats.
High efficiency and linear gain operations
Integrated ESD protection
Large positive and negative gate/source voltage range for improved class C operation
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