onsemi NTMFS Type N-Channel MOSFET, 61 A, 80 V N, 8-Pin DFN
- RS-stocknr.:
- 229-6474
- Fabrikantnummer:
- NTMFSC010N08M7
- Fabrikant:
- onsemi
Subtotaal (1 rol van 3000 eenheden)*
€ 1.734,00
(excl. BTW)
€ 2.097,00
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 0,578 | € 1.734,00 |
*prijsindicatie
- RS-stocknr.:
- 229-6474
- Fabrikantnummer:
- NTMFSC010N08M7
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 61A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | DFN | |
| Series | NTMFS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Maximum Power Dissipation Pd | 78.1W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 5.1mm | |
| Length | 6.25mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 61A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type DFN | ||
Series NTMFS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Maximum Power Dissipation Pd 78.1W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 5.1mm | ||
Length 6.25mm | ||
Automotive Standard No | ||
The ON Semiconductor N-Channel MOSFET is produced using an advanced power trench process. advancements in both silicon and dual cool package technologies have been combined to offer the lowest on state resistance while maintaining excellent switching performance by extremely low junction to ambient thermal resistance.
Improved package thermal capability
Reduces conduction loss
Improved system efficiency
Package material comply with latest requirements
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