onsemi SUPERFET III Type N-Channel MOSFET, 8 A, 800 V N, 3-Pin TO-252 NTD600N80S3Z
- RS-stocknr.:
- 229-6456
- Fabrikantnummer:
- NTD600N80S3Z
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 13,10
(excl. BTW)
€ 15,85
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 2.235 stuk(s) vanaf 31 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 2,62 | € 13,10 |
| 50 - 95 | € 2,258 | € 11,29 |
| 100 - 495 | € 1,958 | € 9,79 |
| 500 - 995 | € 1,72 | € 8,60 |
| 1000 + | € 1,568 | € 7,84 |
*prijsindicatie
- RS-stocknr.:
- 229-6456
- Fabrikantnummer:
- NTD600N80S3Z
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-252 | |
| Series | SUPERFET III | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 60W | |
| Typical Gate Charge Qg @ Vgs | 15.5nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.73mm | |
| Height | 6.22mm | |
| Standards/Approvals | No | |
| Width | 2.39 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-252 | ||
Series SUPERFET III | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 60W | ||
Typical Gate Charge Qg @ Vgs 15.5nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 6.73mm | ||
Height 6.22mm | ||
Standards/Approvals No | ||
Width 2.39 mm | ||
Automotive Standard No | ||
The ON Semiconductor SUPERFET III series MOSFET enables to make more efficient, compact, cooler and more robust applications because of its remarkable performance in switching power applications such as laptop adapter, audio, lighting, ATX power and industrial power supplies.
Higher system reliability at low temperature operation
Lower switching loss
ESD improved capability with Zener diode
Optimized capacitance
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