onsemi SiC Power Type N-Channel MOSFET, 62 A, 650 V N, 7-Pin TO-263 NTBG045N065SC1
- RS-stocknr.:
- 229-6444
- Fabrikantnummer:
- NTBG045N065SC1
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 11,44
(excl. BTW)
€ 13,84
(incl. BTW)
Voeg 7 eenheden toe voor gratis bezorging
Op voorraad
- Plus verzending 728 stuk(s) vanaf 20 februari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 11,44 |
| 10 - 99 | € 9,85 |
| 100 - 499 | € 8,54 |
| 500 + | € 7,51 |
*prijsindicatie
- RS-stocknr.:
- 229-6444
- Fabrikantnummer:
- NTBG045N065SC1
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 62A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-263 | |
| Series | SiC Power | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 50mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 4.8V | |
| Maximum Power Dissipation Pd | 242W | |
| Typical Gate Charge Qg @ Vgs | 105nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.2mm | |
| Height | 9.4mm | |
| Standards/Approvals | No | |
| Width | 4.7 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 62A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-263 | ||
Series SiC Power | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 50mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 4.8V | ||
Maximum Power Dissipation Pd 242W | ||
Typical Gate Charge Qg @ Vgs 105nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Operating Temperature 175°C | ||
Length 10.2mm | ||
Height 9.4mm | ||
Standards/Approvals No | ||
Width 4.7 mm | ||
Automotive Standard No | ||
The ON Semiconductor SiC Power series MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.
Highest efficiency
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size
Gerelateerde Links
- onsemi SiC Power Type N-Channel MOSFET, 62 A, 650 V N, 7-Pin TO-263
- onsemi SiC Power Type N-Channel MOSFET, 145 A, 650 V N, 7-Pin TO-263
- onsemi SiC Power Type N-Channel MOSFET, 145 A, 650 V N, 7-Pin TO-263 NTBG015N065SC1
- onsemi SiC Power Type N-Channel MOSFET, 203 A, 100 V Enhancement, 7-Pin TO-263
- onsemi SiC Power Type N-Channel MOSFET, 203 A, 100 V Enhancement, 7-Pin TO-263 NTBGS004N10G
- onsemi SiC Power Type N-Channel MOSFET, 46 A, 650 V N, 4-Pin TO-247
- onsemi SiC Power Type N-Channel MOSFET, 142 A, 650 V N, 4-Pin TO-247
- onsemi SiC Power Type N-Channel MOSFET, 55 A, 650 V N, 4-Pin TO-247