Vishay E Type N-Channel Power MOSFET, 34 A, 700 V Enhancement, 3-Pin TO-247AD SQW33N65EF-GE3
- RS-stocknr.:
- 228-2975
- Fabrikantnummer:
- SQW33N65EF-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 2 eenheden)*
€ 13,56
(excl. BTW)
€ 16,40
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- Plus verzending 308 stuk(s) vanaf 10 augustus 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 6,78 | € 13,56 |
| 20 - 48 | € 5,765 | € 11,53 |
| 50 - 98 | € 5,22 | € 10,44 |
| 100 - 198 | € 4,205 | € 8,41 |
| 200 + | € 3,66 | € 7,32 |
*prijsindicatie
- RS-stocknr.:
- 228-2975
- Fabrikantnummer:
- SQW33N65EF-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 34A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | E | |
| Package Type | TO-247AD | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 109mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 115nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 375W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 34A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series E | ||
Package Type TO-247AD | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 109mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 115nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 375W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Vishay Series E Power MOSFET, 700V Drain Source Voltage, 34A Continuous Drain Current - SQW33N65EF-GE3
This power MOSFET is a high-voltage N-channel transistor designed for demanding power conversion and control roles. It operates across a wide ambient range and is supplied in a through-hole package suitable for heatsinking and robust mounting in industrial or automotive contexts. The device supports enhancement-mode switching for efficient high-voltage applications and is RoHS-compliant.
Features and Benefits:
• 700V drain capability enables high-voltage system design
• 34A continuous current handles substantial load currents
• 109mΩ Rds(on) reduces conduction losses during operation
• 375W power dissipation supports high-power switching cycles
• 115nC typical gate charge enables predictable gate-drive sizing
• 30V gate tolerance allows common gate-driver selection
• 34A continuous current handles substantial load currents
• 109mΩ Rds(on) reduces conduction losses during operation
• 375W power dissipation supports high-power switching cycles
• 115nC typical gate charge enables predictable gate-drive sizing
• 30V gate tolerance allows common gate-driver selection
Applications
• Suitable for high-voltage motor-drive stages
• Ideal for front-end power-factor correction circuits
• Used with switching supplies in renewable-energy inverters
• Can be used for automotive traction inverters requiring AEC-Q101
• Appropriate for industrial welding and plasma-power modules
• Ideal for front-end power-factor correction circuits
• Used with switching supplies in renewable-energy inverters
• Can be used for automotive traction inverters requiring AEC-Q101
• Appropriate for industrial welding and plasma-power modules
What thermal range can it withstand in harsh installations?
It is rated to operate from -55°C up to 175°C, allowing use in both cold-start and high-heat environments.
Which package facilitates mounting and heat removal?
The TO-247AD through-hole package permits secure bolting to a heatsink for improved thermal management.
How does the channel type affect switching behaviour?
The N-channel enhancement-mode structure provides normally-off operation and efficient conduction when driven above the gate threshold.
Is it suitable for automotive qualification requirements?
It meets AEC-Q101 standards, making it appropriate for many vehicle electronics power stages.
Gerelateerde Links
- Vishay E Type N-Channel Power MOSFET, 34 A, 700 V Enhancement, 3-Pin TO-247AD
- Vishay E Type N-Channel Power MOSFET, 47 A, 700 V Enhancement, 3-Pin TO-247AD SQW44N65EF-GE3
- Vishay E Type N-Channel Power MOSFET, 47 A, 700 V Enhancement, 3-Pin TO-247AD
- Vishay E Series N channel-Channel MOSFET, 62 A, 600 V Enhancement, 4-Pin TO-247AD SIHL039N60E-GE3
- Vishay E Series N channel-Channel MOSFET, 88 A, 650 V Enhancement, 4-Pin TO-247AD SIHL026N65E-GE3
- Vishay E Series N channel-Channel MOSFET, 65 A, 650 V Enhancement, 4-Pin TO-247AD SIHL040N65E-GE3
- Vishay E Series N channel-Channel MOSFET, 96 A, 600 V Enhancement, 4-Pin TO-247AD SIHL023N60E-GE3
- Vishay E Series N channel-Channel MOSFET, 65 A, 650 V Enhancement, 3-Pin TO-247AD SIHW040N65E-GE3
