Vishay TrenchFET Type N, Type N-Channel MOSFET, 67.4 A, 30 V Enhancement, 8-Pin PowerPAK 1212-8SH SiSH536DN-T1-GE3
- RS-stocknr.:
- 228-2928
- Fabrikantnummer:
- SiSH536DN-T1-GE3
- Fabrikant:
- Vishay
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We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 228-2928
- Fabrikantnummer:
- SiSH536DN-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 67.4A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK 1212-8SH | |
| Series | TrenchFET | |
| Mount Type | Surface, Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.25mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 26.5W | |
| Typical Gate Charge Qg @ Vgs | 16.6nC | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 67.4A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK 1212-8SH | ||
Series TrenchFET | ||
Mount Type Surface, Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.25mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 26.5W | ||
Typical Gate Charge Qg @ Vgs 16.6nC | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay N-Channel 30 V (D-S) MOSFET.
100 % Rg and UIS tested
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