Vishay Dual N Channel Mosfet TrenchFET 2 Type N-Channel MOSFET, 13.1 A, 100 V Enhancement, 8-Pin PowerPAK 1212
- RS-stocknr.:
- 228-2827
- Fabrikantnummer:
- Si7252ADP-T1-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 8,53
(excl. BTW)
€ 10,32
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Wordt opgeheven
- Laatste 15.885 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 1,706 | € 8,53 |
| 50 - 120 | € 1,622 | € 8,11 |
| 125 - 245 | € 1,366 | € 6,83 |
| 250 - 495 | € 1,282 | € 6,41 |
| 500 + | € 1,192 | € 5,96 |
*prijsindicatie
- RS-stocknr.:
- 228-2827
- Fabrikantnummer:
- Si7252ADP-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 13.1A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerPAK 1212 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 18.6mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 13.1nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 100V | |
| Transistor Configuration | Dual N Channel Mosfet | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 13.1A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerPAK 1212 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 18.6mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 13.1nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 100V | ||
Transistor Configuration Dual N Channel Mosfet | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Vishay TrenchFET N-Channel power MOSFET is use for DC/DC primary side switch, Telecom / server, Motor drive control and Synchronous rectification.
PWM optimized
100 % Rg and UIS tested
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