Infineon BSS123I Type N-Channel MOSFET, 190 mA, 100 V Depletion, 4-Pin SOT-223 BSS123IXTSA1
- RS-stocknr.:
- 225-0557
- Artikelnummer Distrelec:
- 304-39-400
- Fabrikantnummer:
- BSS123IXTSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 100 eenheden)*
€ 5,60
(excl. BTW)
€ 6,80
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 600 stuk(s) klaar voor verzending vanaf een andere locatie
- Plus verzending 3.900 stuk(s) vanaf 26 januari 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 100 - 400 | € 0,056 | € 5,60 |
| 500 - 900 | € 0,048 | € 4,80 |
| 1000 - 2400 | € 0,045 | € 4,50 |
| 2500 - 4900 | € 0,041 | € 4,10 |
| 5000 + | € 0,03 | € 3,00 |
*prijsindicatie
- RS-stocknr.:
- 225-0557
- Artikelnummer Distrelec:
- 304-39-400
- Fabrikantnummer:
- BSS123IXTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 190mA | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | BSS123I | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 10Ω | |
| Channel Mode | Depletion | |
| Typical Gate Charge Qg @ Vgs | 0.63nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.5W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.7mm | |
| Height | 1.8mm | |
| Width | 3.7 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 190mA | ||
Maximum Drain Source Voltage Vds 100V | ||
Series BSS123I | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 10Ω | ||
Channel Mode Depletion | ||
Typical Gate Charge Qg @ Vgs 0.63nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.5W | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.7mm | ||
Height 1.8mm | ||
Width 3.7 mm | ||
Automotive Standard No | ||
The Infineon BSS123I is the small signal, small power N- and P-channel MOSFETs provide a wide range of VGS(th) levels and RDS(on) values, as well as multiple voltage classes. This MOSFET have enhancement and depletion-mode options.
PCB-space and cost savings
Gate drive flexibility
Reduced design complexity
Environmentally friendly
High overall efficiency
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