Infineon HEXFET Type N-Channel MOSFET, 345 A, 60 V, 8-Pin DirectFET AUIRF7749L2TR
- RS-stocknr.:
- 223-8455
- Fabrikantnummer:
- AUIRF7749L2TR
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 13,79
(excl. BTW)
€ 16,686
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 3.828 stuk(s) vanaf 19 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 8 | € 6,895 | € 13,79 |
| 10 - 18 | € 6,205 | € 12,41 |
| 20 - 48 | € 5,795 | € 11,59 |
| 50 - 98 | € 5,45 | € 10,90 |
| 100 + | € 5,035 | € 10,07 |
*prijsindicatie
- RS-stocknr.:
- 223-8455
- Fabrikantnummer:
- AUIRF7749L2TR
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 345A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | DirectFET | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.5mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 341W | |
| Typical Gate Charge Qg @ Vgs | 183nC | |
| Maximum Gate Source Voltage Vgs | 60 V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 345A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type DirectFET | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.5mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 341W | ||
Typical Gate Charge Qg @ Vgs 183nC | ||
Maximum Gate Source Voltage Vgs 60 V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon single N-channel HEXFET power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET packaging platform coupled with the latest silicon technology allows this MOSFET to offer substantial system level savings and performance improvement specifically in motor drive, DC-DC and other heavy load applications.
Advanced process technology
Exceptionally small footprint and low profile
High power density
Low parasitic parameters
Dual sided cooling
175°C Operating temperature
Lead free
RoHS compliant
Halogen free
Automotive qualified
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