ROHM Dual 2 Type P-Channel MOSFET, 2.5 A, 60 V Enhancement, 7-Pin DFN UT6JC5TCR
- RS-stocknr.:
- 223-6398
- Fabrikantnummer:
- UT6JC5TCR
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 25 eenheden)*
€ 9,625
(excl. BTW)
€ 11,65
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 12 augustus 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 25 | € 0,385 | € 9,63 |
| 50 - 75 | € 0,378 | € 9,45 |
| 100 - 225 | € 0,269 | € 6,73 |
| 250 - 975 | € 0,264 | € 6,60 |
| 1000 + | € 0,226 | € 5,65 |
*prijsindicatie
- RS-stocknr.:
- 223-6398
- Fabrikantnummer:
- UT6JC5TCR
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.5A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 2.8Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 6.3nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 0.65mm | |
| Length | 2mm | |
| Width | 2 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.5A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 2.8Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 6.3nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 0.65mm | ||
Length 2mm | ||
Width 2 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The ROHM small signal MOSFET has DFN1010-3W package type. It is mainly used for switching circuits, high side loadswitch and relay driver.
Leadless ultra small and exposed drain pad for excellent thermal conduction SMD plastic package
Side wettable Flanks for automated optical solder inspection
AEC-Q101 qualified
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