Infineon IPP60R Type N-Channel MOSFET, 23 A, 600 V Enhancement, 3-Pin TO-220 IPP60R022S7XKSA1
- RS-stocknr.:
- 222-4924
- Fabrikantnummer:
- IPP60R022S7XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 9,69
(excl. BTW)
€ 11,72
(incl. BTW)
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- Plus verzending 398 stuk(s) vanaf 22 januari 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 9,69 |
| 10 - 24 | € 9,21 |
| 25 - 49 | € 8,82 |
| 50 - 99 | € 8,43 |
| 100 + | € 7,85 |
*prijsindicatie
- RS-stocknr.:
- 222-4924
- Fabrikantnummer:
- IPP60R022S7XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 23A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | IPP60R | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 390W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Height | 9.45mm | |
| Standards/Approvals | No | |
| Width | 4.57 mm | |
| Length | 10.36mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 23A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series IPP60R | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 390W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Height 9.45mm | ||
Standards/Approvals No | ||
Width 4.57 mm | ||
Length 10.36mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon design optimized for low conduction losses, the 600V CoolMOS™ S7 Superjunction MOSFET (IPP60R022S7) in TO-220 features the best RDS(on) x price for low switching frequency applications, such as active bridge rectifiers, inverter stages, in-rush relays, PLCs, HV DC lines, power solid state relays and solid state circuit breakers. The 600V CoolMOS™ S7 SJ MOSFET achieves higher energy efficiency and reduces BOM expenses.
Minimize conduction losses
Increase energy efficiency
More compact and easier designs
Eliminate or reduce heat sink in solid state design
Lower total cost of ownership (TCO) or bill-of-material (BOM) cost
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