Infineon IPL60R Type N-Channel MOSFET, 19 A, 600 V Enhancement, 5-Pin ThinPAK IPL60R185P7AUMA1
- RS-stocknr.:
- 222-4916
- Fabrikantnummer:
- IPL60R185P7AUMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 13,08
(excl. BTW)
€ 15,825
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Informatie over voorraden is momenteel niet toegankelijk
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 2,616 | € 13,08 |
| 25 - 45 | € 2,092 | € 10,46 |
| 50 - 120 | € 1,936 | € 9,68 |
| 125 - 245 | € 1,804 | € 9,02 |
| 250 + | € 1,676 | € 8,38 |
*prijsindicatie
- RS-stocknr.:
- 222-4916
- Fabrikantnummer:
- IPL60R185P7AUMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 19A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPL60R | |
| Package Type | ThinPAK | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 185mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 8.1mm | |
| Height | 1.1mm | |
| Width | 8.1 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 19A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPL60R | ||
Package Type ThinPAK | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 185mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Maximum Operating Temperature 150°C | ||
Length 8.1mm | ||
Height 1.1mm | ||
Width 8.1 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ P7 is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.
ESD ruggedness of ≥ 2kV (HBM class 2)
Integrated gate resistor R G
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available
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