Infineon CoolMOS N-Channel MOSFET, 33 A, 700 V Enhancement, 4-Pin TO-247 IPZ65R065C7XKSA1
- RS-stocknr.:
- 222-4729
- Fabrikantnummer:
- IPZ65R065C7XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 2 eenheden)*
€ 18,55
(excl. BTW)
€ 22,45
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- Plus verzending 318 stuk(s) vanaf 12 oktober 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 8 | € 9,275 | € 18,55 |
| 10 - 18 | € 8,255 | € 16,51 |
| 20 - 48 | € 7,70 | € 15,40 |
| 50 - 98 | € 7,225 | € 14,45 |
| 100 + | € 6,69 | € 13,38 |
*prijsindicatie
- RS-stocknr.:
- 222-4729
- Fabrikantnummer:
- IPZ65R065C7XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | CoolMOS | |
| Package Type | TO-247 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 65nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 171W | |
| Forward Voltage Vf | 900mV | |
| Height | 21.1mm | |
| Length | 16.13mm | |
| Standards/Approvals | No | |
| Width | 5.21mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series CoolMOS | ||
Package Type TO-247 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 65nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 171W | ||
Forward Voltage Vf 900mV | ||
Height 21.1mm | ||
Length 16.13mm | ||
Standards/Approvals No | ||
Width 5.21mm | ||
Automotive Standard No | ||
The Infineon design of Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
Increased MOSFET dv/dt ruggedness
Better efficiency due to best in class FOM RDS(on)*Eoss and RDS(on)*Qg
Best in class RDS(on) /package
Pb-free plating, halogen free mold compound
Gerelateerde Links
- Infineon CoolMOS N-Channel MOSFET, 33 A, 700 V Enhancement, 4-Pin TO-247 IPZ65R065C7XKSA1
- Infineon CoolMOS N-Channel MOSFET, 63.3 A, 700 V Enhancement, 3-Pin TO-247 IPW65R048CFDAFKSA1
- Infineon CoolMOS C7 N-Channel MOSFET, 46 A, 700 V Enhancement, 3-Pin TO-247 IPW65R045C7FKSA1
- Infineon CoolMOS C7 N-Channel MOSFET, 13 A, 700 V Enhancement, 3-Pin TO-247 IPW65R190C7XKSA1
- Infineon CoolMOS C7 N-Channel MOSFET, 75 A, 700 V Enhancement, 3-Pin TO-247 IPW65R019C7FKSA1
- Infineon CoolMOS C7 N-Channel MOSFET, 46 A, 700 V Enhancement, 4-Pin TO-247 IPZ65R045C7XKSA1
- Infineon CoolMOS CFD N-Channel MOSFET, 43 A, 700 V Enhancement, 3-Pin TO-247 IPW65R080CFDAFKSA1
- Infineon CoolMOS C6 N-Channel MOSFET, 83 A, 700 V Enhancement, 3-Pin TO-247 IPW65R037C6FKSA1