Infineon CoolMOS Type N-Channel MOSFET, 2.5 A, 800 V Enhancement, 3-Pin SOT-223 IPN80R2K4P7ATMA1
- RS-stocknr.:
- 222-4689
- Fabrikantnummer:
- IPN80R2K4P7ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 20 eenheden)*
€ 14,24
(excl. BTW)
€ 17,24
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- Plus verzending 2.740 stuk(s) vanaf 31 augustus 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 20 - 80 | € 0,712 | € 14,24 |
| 100 - 180 | € 0,555 | € 11,10 |
| 200 - 480 | € 0,52 | € 10,40 |
| 500 - 980 | € 0,484 | € 9,68 |
| 1000 + | € 0,449 | € 8,98 |
*prijsindicatie
- RS-stocknr.:
- 222-4689
- Fabrikantnummer:
- IPN80R2K4P7ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.5A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | CoolMOS | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.4mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 7.5nC | |
| Maximum Power Dissipation Pd | 6.3W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.7mm | |
| Height | 1.8mm | |
| Width | 3.7mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.5A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series CoolMOS | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.4mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 7.5nC | ||
Maximum Power Dissipation Pd 6.3W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Length 6.7mm | ||
Height 1.8mm | ||
Width 3.7mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon design of Cool MOS™ P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation.
Product validation acc. JEDEC Standard
Low switching losses (Eoss) Integrated ESD protection diode
Excellent thermal behaviour
Gerelateerde Links
- Infineon CoolMOS Type N-Channel MOSFET, 2.5 A, 800 V Enhancement, 3-Pin SOT-223
- Infineon CoolMOS Type N-Channel MOSFET, 4 A, 800 V Enhancement, 3-Pin SOT-223
- Infineon CoolMOS Type N-Channel MOSFET, 1.9 A, 800 V Enhancement, 3-Pin SOT-223
- Infineon CoolMOS Type N-Channel MOSFET, 4 A, 800 V Enhancement, 3-Pin SOT-223 IPN95R2K0P7ATMA1
- Infineon CoolMOS Type N-Channel MOSFET, 1.9 A, 800 V Enhancement, 3-Pin SOT-223 IPN80R3K3P7ATMA1
- Infineon CoolMOS P7 Type N-Channel MOSFET, 1.5 A, 800 V Enhancement, 3-Pin SOT-223
- Infineon CoolMOS P7 Type N-Channel MOSFET, 6 A, 800 V Enhancement, 3-Pin SOT-223
- Infineon CoolMOS P7 Type N-Channel MOSFET, 7 A, 800 V Enhancement, 3-Pin SOT-223