DiodesZetex DMT Type N-Channel MOSFET, 16.1 A, 60 V Enhancement, 8-Pin VDFN DMT64M8LCG-7
- RS-stocknr.:
- 222-2881
- Fabrikantnummer:
- DMT64M8LCG-7
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 8,80
(excl. BTW)
€ 10,60
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 1.620 stuk(s) vanaf 23 februari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 40 | € 0,88 | € 8,80 |
| 50 - 90 | € 0,86 | € 8,60 |
| 100 - 240 | € 0,673 | € 6,73 |
| 250 - 990 | € 0,622 | € 6,22 |
| 1000 + | € 0,606 | € 6,06 |
*prijsindicatie
- RS-stocknr.:
- 222-2881
- Fabrikantnummer:
- DMT64M8LCG-7
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 16.1A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | DMT | |
| Package Type | VDFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2.16W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 47.5nC | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Height | 3.3mm | |
| Width | 0.8 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 16.1A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series DMT | ||
Package Type VDFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2.16W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 47.5nC | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Height 3.3mm | ||
Width 0.8 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The DiodesZetex N-channel enhancement mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and load switch.
High Conversion Efficiency
Low RDS(ON)—Minimizes On State Losses
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
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