DiodesZetex DMG1012UWQ Type N-Channel MOSFET, 950 mA, 20 V Enhancement, 3-Pin SOT-323 DMG1012UWQ-7
- RS-stocknr.:
- 222-2825
- Fabrikantnummer:
- DMG1012UWQ-7
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 50 eenheden)*
€ 2,00
(excl. BTW)
€ 2,50
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 5.700 stuk(s) vanaf 05 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 50 - 50 | € 0,04 | € 2,00 |
| 100 - 200 | € 0,039 | € 1,95 |
| 250 - 450 | € 0,038 | € 1,90 |
| 500 - 950 | € 0,037 | € 1,85 |
| 1000 + | € 0,036 | € 1,80 |
*prijsindicatie
- RS-stocknr.:
- 222-2825
- Fabrikantnummer:
- DMG1012UWQ-7
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 950mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-323 | |
| Series | DMG1012UWQ | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 450mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 0.29W | |
| Maximum Gate Source Voltage Vgs | 6 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.2mm | |
| Width | 1.35 mm | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 950mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-323 | ||
Series DMG1012UWQ | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 450mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 0.29W | ||
Maximum Gate Source Voltage Vgs 6 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 2.2mm | ||
Width 1.35 mm | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex N-channel enhancement mode MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
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