onsemi NTTFS Type N-Channel MOSFET, 37.2 A, 150 V Enhancement, 8-Pin WDFN NTTFS022N15MC
- RS-stocknr.:
- 221-6750
- Fabrikantnummer:
- NTTFS022N15MC
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 19,28
(excl. BTW)
€ 23,33
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 03 augustus 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 1,928 | € 19,28 |
| 100 - 240 | € 1,662 | € 16,62 |
| 250 + | € 1,441 | € 14,41 |
*prijsindicatie
- RS-stocknr.:
- 221-6750
- Fabrikantnummer:
- NTTFS022N15MC
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 37.2A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | NTTFS | |
| Package Type | WDFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 71.4W | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.4mm | |
| Standards/Approvals | No | |
| Height | 3.4mm | |
| Width | 0.8 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 37.2A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series NTTFS | ||
Package Type WDFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 71.4W | ||
Maximum Operating Temperature 175°C | ||
Length 3.4mm | ||
Standards/Approvals No | ||
Height 3.4mm | ||
Width 0.8 mm | ||
Automotive Standard No | ||
The ON Semiconductor industrial power MOSFET in a 3.3x3.3mm flat lead package designed for compact and efficient designs and improves conduction loss.
Low RDS(on) to minimize conduction losses
Low capacitance to minimize driver losses
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