onsemi NTMFS1D7N Type N-Channel MOSFET, 170 A, 30 V Enhancement, 5-Pin DFN NTMFS1D7N03CGT1G
- RS-stocknr.:
- 221-6730
- Fabrikantnummer:
- NTMFS1D7N03CGT1G
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 8,08
(excl. BTW)
€ 9,78
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 07 oktober 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 0,808 | € 8,08 |
| 100 - 240 | € 0,696 | € 6,96 |
| 250 - 490 | € 0,604 | € 6,04 |
| 500 - 990 | € 0,53 | € 5,30 |
| 1000 + | € 0,482 | € 4,82 |
*prijsindicatie
- RS-stocknr.:
- 221-6730
- Fabrikantnummer:
- NTMFS1D7N03CGT1G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 170A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | NTMFS1D7N | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.74mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 87W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 48nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 1.1 mm | |
| Standards/Approvals | Pb-Free, RoHS | |
| Length | 5.3mm | |
| Height | 6.3mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 170A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series NTMFS1D7N | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.74mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 87W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 48nC | ||
Maximum Operating Temperature 175°C | ||
Width 1.1 mm | ||
Standards/Approvals Pb-Free, RoHS | ||
Length 5.3mm | ||
Height 6.3mm | ||
Automotive Standard No | ||
The ON Semiconductor 30V of power MOSFET used 170 A of drain current with single N−channel. It improve inrush current management and improve system efficiency.
Low RDS(on) to minimize conduction losses
Low capacitance to minimize driver losses
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