onsemi NTMFS0D6N Type N-Channel MOSFET, 433 A, 30 V Enhancement, 5-Pin DFN NTMFS0D6N03CT1G
- RS-stocknr.:
- 221-6726
- Fabrikantnummer:
- NTMFS0D6N03CT1G
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 11,18
(excl. BTW)
€ 13,53
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 3.060 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 2,236 | € 11,18 |
| 50 - 95 | € 1,928 | € 9,64 |
| 100 + | € 1,672 | € 8,36 |
*prijsindicatie
- RS-stocknr.:
- 221-6726
- Fabrikantnummer:
- NTMFS0D6N03CT1G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 433A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | DFN | |
| Series | NTMFS0D6N | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 0.62mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 145nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 200W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 5.3mm | |
| Width | 1.1 mm | |
| Height | 6.3mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 433A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type DFN | ||
Series NTMFS0D6N | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 0.62mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 145nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 200W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 5.3mm | ||
Width 1.1 mm | ||
Height 6.3mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ON Semiconductor 30V of power MOSFET used 433 A of drain current with single N−channel. It improve inrush current management and also improve system efficiency.
Advanced package (5x6mm)
Ultra low RDS(on) to improve system efficiency
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