onsemi NTMFS005N Type N-Channel MOSFET, 105 A, 100 V Enhancement, 5-Pin DFN
- RS-stocknr.:
- 221-6719
- Fabrikantnummer:
- NTMFS005N10MCLT1G
- Fabrikant:
- onsemi
Tekort aan voorraad
Vanwege een wereldwijd voorraadtekort, weten we niet wanneer dit weer voorradig zal zijn.
- RS-stocknr.:
- 221-6719
- Fabrikantnummer:
- NTMFS005N10MCLT1G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 105A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | NTMFS005N | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 5.1mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 55nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 125W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | Beryllium Free, Pb-Free, RoHS | |
| Height | 6.3mm | |
| Length | 5.3mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 105A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series NTMFS005N | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 5.1mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 55nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 125W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals Beryllium Free, Pb-Free, RoHS | ||
Height 6.3mm | ||
Length 5.3mm | ||
Automotive Standard No | ||
The ON Semiconductor industrial power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance.
Low RDS(on) to minimize conduction losses
Low QG and capacitance to minimize driver losses
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