Infineon HEXFET Type N-Channel MOSFET & Diode, 86 A, 30 V Enhancement, 3-Pin TO-252 IRFR3709ZTRLPBF
- RS-stocknr.:
- 220-7496
- Fabrikantnummer:
- IRFR3709ZTRLPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 20 eenheden)*
€ 15,62
(excl. BTW)
€ 18,90
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 1.160 stuk(s) vanaf 20 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 20 - 80 | € 0,781 | € 15,62 |
| 100 - 180 | € 0,742 | € 14,84 |
| 200 - 480 | € 0,711 | € 14,22 |
| 500 - 980 | € 0,679 | € 13,58 |
| 1000 + | € 0,633 | € 12,66 |
*prijsindicatie
- RS-stocknr.:
- 220-7496
- Fabrikantnummer:
- IRFR3709ZTRLPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 86A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 79W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 6.22mm | |
| Length | 6.73mm | |
| Width | 2.39 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 86A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 79W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 6.22mm | ||
Length 6.73mm | ||
Width 2.39 mm | ||
Automotive Standard No | ||
The Infineon's OptiMOS N-channel power MOSFETs are developed to increase efficiency, power density and cost-effectiveness. Designed for high performance applications and optimized for high switching frequency, OptiMOS products convince with the industry's best figure of merit. The OptiMOS power MOSFET portfolio, now complemented by Strong IRFET, creates a truly powerful combination. Benefit from a perfect match of robust and excellent price/performance of Strong IRFET MOSFETs and best-in-class technology of OptiMOS MOSFETs. Both product families answer to the highest quality standards and performance demands. The joint portfolio, covering voltages from 12V up to 300V MOSFETs, can address a broad range of needs from low to high switching frequencies such as SMPS, battery powered applications, motor control and drives, inverters, and computing.
Industry-leading quality
Low RDS(ON) at 4.5V VGS
Fully Characterized Avalanche Voltage and Current
Ultra-Low Gate Impedance
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