Infineon CoolMOS C7 N-Channel MOSFET & Diode, 145 A, 700 V Enhancement, 3-Pin TO-247 IPW65R065C7XKSA1
- RS-stocknr.:
- 220-7459
- Fabrikantnummer:
- IPW65R065C7XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 2 eenheden)*
€ 18,34
(excl. BTW)
€ 22,20
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- Plus verzending 212 stuk(s) vanaf 02 november 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 8 | € 9,17 | € 18,34 |
| 10 - 18 | € 8,25 | € 16,50 |
| 20 - 48 | € 7,705 | € 15,41 |
| 50 - 98 | € 7,15 | € 14,30 |
| 100 + | € 6,685 | € 13,37 |
*prijsindicatie
- RS-stocknr.:
- 220-7459
- Fabrikantnummer:
- IPW65R065C7XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 145A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | CoolMOS C7 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 64nC | |
| Forward Voltage Vf | 900mV | |
| Maximum Power Dissipation Pd | 171W | |
| Minimum Operating Temperature | -55°C | |
| Width | 5.21mm | |
| Standards/Approvals | No | |
| Length | 16.13mm | |
| Height | 21.1mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 145A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series CoolMOS C7 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 64nC | ||
Forward Voltage Vf 900mV | ||
Maximum Power Dissipation Pd 171W | ||
Minimum Operating Temperature -55°C | ||
Width 5.21mm | ||
Standards/Approvals No | ||
Length 16.13mm | ||
Height 21.1mm | ||
Automotive Standard No | ||
The Infineon Cool MOS C7 super junction MOSFET series is a revolutionary step forward in technology, providing the worlds' lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.
650V voltage
Revolutionary best-in-class R DS(on)/package
Reduced energy stored in output capacitance (Eoss)
Lower gate charge Qg
Space saving through use of smaller packages or reduction of parts
Improved safety margin and suitable for both SMPS and solar inverter applications
Lowest conduction losses/package
Low switching losses
Better light load efficiency
Increasing power density
Outstanding Cool MOS™ quality
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