Infineon CoolMOS Type N-Channel MOSFET & Diode, 15 A, 900 V Enhancement, 3-Pin TO-263 IPB90R340C3ATMA2
- RS-stocknr.:
- 220-7397
- Fabrikantnummer:
- IPB90R340C3ATMA2
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 10,86
(excl. BTW)
€ 13,14
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 758 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 8 | € 5,43 | € 10,86 |
| 10 - 18 | € 4,88 | € 9,76 |
| 20 - 48 | € 4,565 | € 9,13 |
| 50 - 98 | € 4,235 | € 8,47 |
| 100 + | € 3,905 | € 7,81 |
*prijsindicatie
- RS-stocknr.:
- 220-7397
- Fabrikantnummer:
- IPB90R340C3ATMA2
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 900V | |
| Package Type | TO-263 | |
| Series | CoolMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 340mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 208W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 94nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.31mm | |
| Standards/Approvals | No | |
| Width | 9.45 mm | |
| Height | 4.57mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 900V | ||
Package Type TO-263 | ||
Series CoolMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 340mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 208W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 94nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 10.31mm | ||
Standards/Approvals No | ||
Width 9.45 mm | ||
Height 4.57mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon 900V Cool MOS C3 is Infineon's third series of Cool MOS with market entry in 2001. C3 is the "working horse" of the portfolio.
Low specific on-state resistance (RDS(on)*A)
Very low energy storage in output capacitance (Eoss) @400V
Low gate charge (Qg)
Field proven Cool MOS™ quality
Gerelateerde Links
- Infineon CoolMOS Type N-Channel MOSFET & Diode, 15 A, 900 V Enhancement, 3-Pin TO-263
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 57.2 A, 650 V Enhancement TO-263
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 57.2 A, 650 V Enhancement TO-263 IPB65R190CFDAATMA1
- Infineon CoolMOS Type N-Channel MOSFET & Diode, 145 A, 700 V Enhancement, 3-Pin TO-263
- Infineon CoolMOS Type N-Channel MOSFET & Diode, 145 A, 700 V Enhancement, 3-Pin TO-263 IPB65R065C7ATMA2
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 151 A, 650 V Enhancement, 3-Pin TO-263
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 151 A, 650 V Enhancement, 3-Pin TO-263 IPB60R060P7ATMA1
- Infineon CoolMOS Type N-Channel MOSFET, 14 A, 900 V Enhancement, 3-Pin TO-220
