Infineon CoolMOS CSFD Type N-Channel MOSFET, 236 A, 650 V Enhancement, 3-Pin TO-247 IPW60R037CSFDXKSA1
- RS-stocknr.:
- 219-6021
- Fabrikantnummer:
- IPW60R037CSFDXKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 8,10
(excl. BTW)
€ 9,80
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 18 juni 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 4 | € 8,10 |
| 5 - 9 | € 7,45 |
| 10 - 24 | € 6,96 |
| 25 - 49 | € 6,48 |
| 50 + | € 5,99 |
*prijsindicatie
- RS-stocknr.:
- 219-6021
- Fabrikantnummer:
- IPW60R037CSFDXKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 236A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS CSFD | |
| Package Type | TO-247 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 37mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 245W | |
| Typical Gate Charge Qg @ Vgs | 136nC | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 5.21mm | |
| Width | 21.1 mm | |
| Standards/Approvals | No | |
| Length | 16.13mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 236A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS CSFD | ||
Package Type TO-247 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 37mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 245W | ||
Typical Gate Charge Qg @ Vgs 136nC | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 5.21mm | ||
Width 21.1 mm | ||
Standards/Approvals No | ||
Length 16.13mm | ||
Automotive Standard No | ||
The Infineon IPW60R037CSFD CoolMOS superjunction MOSFET is an optimized device tailored to address the off-board EV-charging market segment. Thanks to low gate charge (Qg) and improved switching behaviour it offers highest efficiency in the targeted market. In addition to that it comes along with an integrated fast body diode and tremendously reduced reverse recovery charge (Qrr) leading to highest reliability in resonant topologies. Due to these features the IPW60R037CSFD meets the efficiency and reliability standards of the off-board EV-charging station market and furthermore supports high power density solutions.
Ultra-fast body diode
Best-in-class reverse recovery charge (Qrr)
Improved reverse diode dv/dt and dif/dt ruggedness
Gerelateerde Links
- Infineon CoolMOS CSFD Type N-Channel MOSFET, 236 A, 650 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS CSFD Type N-Channel MOSFET, 360 A, 650 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS CSFD Type N-Channel MOSFET, 360 A, 650 V Enhancement, 3-Pin TO-247 IPW60R024CFD7XKSA1
- Infineon CoolMOS Type N-Channel MOSFET, 14 A, 650 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS Type N-Channel MOSFET, 77.5 A, 650 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS Type N-Channel MOSFET, 111 A, 650 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS Type N-Channel MOSFET, 14 A, 650 V Enhancement, 3-Pin TO-247 IPW60R170CFD7XKSA1
- Infineon CoolMOS Type N-Channel MOSFET, 111 A, 650 V Enhancement, 3-Pin TO-247 IPW60R018CFD7XKSA1