Infineon CoolMOS Type N-Channel MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-220 IPP80R360P7XKSA1
- RS-stocknr.:
- 219-6011
- Fabrikantnummer:
- IPP80R360P7XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 12,59
(excl. BTW)
€ 15,235
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 640 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 2,518 | € 12,59 |
| 50 - 120 | € 2,264 | € 11,32 |
| 125 - 245 | € 2,114 | € 10,57 |
| 250 - 495 | € 1,964 | € 9,82 |
| 500 + | € 1,838 | € 9,19 |
*prijsindicatie
- RS-stocknr.:
- 219-6011
- Fabrikantnummer:
- IPP80R360P7XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | CoolMOS | |
| Package Type | TO-220 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 360mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Maximum Power Dissipation Pd | 84W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.36mm | |
| Height | 4.57mm | |
| Width | 15.95 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series CoolMOS | ||
Package Type TO-220 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 360mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Maximum Power Dissipation Pd 84W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.36mm | ||
Height 4.57mm | ||
Width 15.95 mm | ||
Automotive Standard No | ||
The Infineon 800V CoolMOS P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.
Easy to drive and to design-in
Better production yield by reducing ESD related failures
Less production issues and reduced field returns
Easy to select right parts for fine tuning of designs
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