Infineon HEXFET N-Channel MOSFET, 324 A, 25 V, 8-Pin SuperSO IRFH8201TRPBF
- RS-stocknr.:
- 218-3104
- Fabrikantnummer:
- IRFH8201TRPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 10 eenheden)*
€ 16,03
(excl. BTW)
€ 19,40
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 20 september 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 40 | € 1,603 | € 16,03 |
| 50 - 90 | € 1,524 | € 15,24 |
| 100 - 240 | € 1,459 | € 14,59 |
| 250 - 490 | € 1,397 | € 13,97 |
| 500 + | € 1,298 | € 12,98 |
*prijsindicatie
- RS-stocknr.:
- 218-3104
- Fabrikantnummer:
- IRFH8201TRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 324A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | HEXFET | |
| Package Type | SuperSO | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 950mΩ | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 156W | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 6mm | |
| Standards/Approvals | No | |
| Width | 5mm | |
| Height | 0.9mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 324A | ||
Maximum Drain Source Voltage Vds 25V | ||
Series HEXFET | ||
Package Type SuperSO | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 950mΩ | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 156W | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 6mm | ||
Standards/Approvals No | ||
Width 5mm | ||
Height 0.9mm | ||
Automotive Standard No | ||
The Infineon HEXFET series single N-Channel Power MOSFET. It is mainly used in battery operated DC motor inverters.
Compatible with Existing Surface Mount Techniques
Low Thermal Resistance to PCB (<0.8°C/W)
RoHS Compliant, Halogen-Free
Gerelateerde Links
- Infineon HEXFET Type N-Channel MOSFET, 324 A, 25 V, 8-Pin SuperSO
- Infineon HEXFET Type N-Channel MOSFET, 34 A, 200 V Enhancement, 8-Pin SuperSO
- Infineon HEXFET Type N-Channel MOSFET, 34 A, 200 V Enhancement, 8-Pin SuperSO IRFH5020TRPBF
- Infineon OptiMOS Type N-Channel MOSFET, 234 A, 60 V N, 8-Pin SuperSO
- Infineon OptiMOS Type N-Channel MOSFET, 64 A, 60 V N, 8-Pin SuperSO
- Infineon OptiMOS Type N-Channel MOSFET, 234 A, 60 V N, 8-Pin SuperSO BSC016N06NSTATMA1
- Infineon OptiMOS Type N-Channel MOSFET, 64 A, 60 V N, 8-Pin SuperSO BSC065N06LS5ATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET, 24 A, 250 V N, 8-Pin SuperSO