Infineon 500V CoolMOS CE Type N-Channel MOSFET, 7.6 A, 550 V N, 3-Pin TO-220
- RS-stocknr.:
- 218-2991
- Fabrikantnummer:
- IPA50R800CEXKSA2
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 tube van 50 eenheden)*
€ 23,30
(excl. BTW)
€ 28,20
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 400 stuk(s) vanaf 17 maart 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 - 50 | € 0,466 | € 23,30 |
| 100 - 200 | € 0,363 | € 18,15 |
| 250 - 450 | € 0,34 | € 17,00 |
| 500 - 1200 | € 0,317 | € 15,85 |
| 1250 + | € 0,293 | € 14,65 |
*prijsindicatie
- RS-stocknr.:
- 218-2991
- Fabrikantnummer:
- IPA50R800CEXKSA2
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 7.6A | |
| Maximum Drain Source Voltage Vds | 550V | |
| Package Type | TO-220 | |
| Series | 500V CoolMOS CE | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 800mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 0.83V | |
| Typical Gate Charge Qg @ Vgs | 12.4nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 29.75mm | |
| Length | 16.15mm | |
| Standards/Approvals | No | |
| Width | 4.9 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 7.6A | ||
Maximum Drain Source Voltage Vds 550V | ||
Package Type TO-220 | ||
Series 500V CoolMOS CE | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 800mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 0.83V | ||
Typical Gate Charge Qg @ Vgs 12.4nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Height 29.75mm | ||
Length 16.15mm | ||
Standards/Approvals No | ||
Width 4.9 mm | ||
Automotive Standard No | ||
The Infineon 500V CoolMOS™ CE series N-channel power MOSFET. The CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. This MOSFET is used in PFC stages, hard switching PWM stages and resonant switching stages, for e.g. PC Silverbox, Adapter, LCD & PDP TV and indoor lighting.
Very high commutation ruggedness
Easy to use/drive
Pb-free plating, Halogen free mold compound
Gerelateerde Links
- Infineon 500V CoolMOS CE Type N-Channel MOSFET, 7.6 A, 550 V N, 3-Pin TO-220 IPA50R800CEXKSA2
- Infineon 500V CoolMOS CE Type N-Channel MOSFET, 7.6 A, 500 V N, 3-Pin TO-252
- Infineon 500V CoolMOS CE Type N-Channel MOSFET, 7.6 A, 500 V N, 3-Pin TO-252 IPD50R500CEAUMA1
- Infineon 500V CoolMOS CE Type N-Channel MOSFET, 6.6 A, 500 V N, 3-Pin TO-220
- Infineon 500V CoolMOS CE Type N-Channel MOSFET, 6.6 A, 500 V N, 3-Pin TO-220 IPA50R950CEXKSA2
- Infineon 500V CoolMOS CE Type N-Channel MOSFET, 4.8 A, 500 V N, 3-Pin TO-252
- Infineon 500V CoolMOS CE Type N-Channel MOSFET, 4.8 A, 500 V N, 3-Pin TO-252 IPD50R1K4CEAUMA1
- Infineon CoolMOS CE Type N-Channel MOSFET, 18.5 A, 550 V Enhancement, 3-Pin TO-220