Infineon IAUA N-Channel MOSFET, 200 A, 40 V Enhancement, 8-Pin PG-HSOF-5 IAUA200N04S5N010AUMA1

RS-stocknr.:: 218-2988
Fabrikantnummer:: IAUA200N04S5N010AUMA1
Fabrikant:: Infineon

Infineon IAUA N-Channel MOSFET, 200 A, 40 V Enhancement, 8-Pin PG-HSOF-5 IAUA200N04S5N010AUMA1

Bulkkorting beschikbaar

Bekijk bulkkorting

Subtotaal (1 verpakking van 5 eenheden)*

€ 15,48

(excl. BTW)

€ 18,73

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Op voorraad

5.805 stuk(s) klaar voor verzending vanaf een andere locatie

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per verpakking*
5 - 45	€ 3,096	€ 15,48
50 - 120	€ 2,536	€ 12,68
125 - 245	€ 2,378	€ 11,89
250 - 495	€ 2,23	€ 11,15
500 +	€ 2,076	€ 10,38

*prijsindicatie

RS-stocknr.:: 218-2988
Fabrikantnummer:: IAUA200N04S5N010AUMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	200A
	Maximum Drain Source Voltage Vds	40V
	Package Type	PG-HSOF-5
	Series	IAUA
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	1mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1.1V
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Power Dissipation Pd	81W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 200A
	Maximum Drain Source Voltage Vds 40V
	Package Type PG-HSOF-5
	Series IAUA
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 1mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1.1V
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Power Dissipation Pd 81W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - IAUA200N04S5N010AUMA1

Infineon IAUA Series MOSFET, 40V Maximum Drain-Source Voltage, 200A Maximum Continuous Drain Current - IAUA200N04S5N010AUMA1

This MOSFET is a high-current N-channel transistor designed for surface-mounted power switching and control in demanding environments. It operates across an extended temperature range and supports automotive-level qualification, making it suitable for applications requiring robust thermal tolerance and sustained high drain current.

Features and Benefits:

• 1mΩ RDS(on) minimises conduction losses
• 200A continuous current enables heavy-load switching
• 40V drain voltage supports low-voltage power systems
• 80nC gate charge allows predictable switching behaviour
• 81W power dissipation manages substantial thermal load

Applications

• Suitable for automotive power management modules
• Ideal for high-current motor driver stages
• Used with DC-DC converters in power distribution
• Can be used for load switching in industrial controls

What gate voltage limits must be observed?

The device accepts gate drive up to 20V and should not exceed that Value to prevent gate stress.

How does it perform in extreme temperatures?

It operates from -55°C up to 175°C, enabling use in environments with wide thermal variation.

What package and mounting style are provided?

The component is supplied in a PG‑HSOF‑5 package intended for surface mounting.

Which automotive qualification applies to this part?

It meets the AEC‑Q101 standard for automotive electronic components.