Infineon HEXFET Type N-Channel MOSFET, 140 A, 30 V TO-263 IRL3803STRLPBF
- RS-stocknr.:
- 217-2638
- Fabrikantnummer:
- IRL3803STRLPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 17,32
(excl. BTW)
€ 20,96
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 90 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 40 | € 1,732 | € 17,32 |
| 50 - 90 | € 1,646 | € 16,46 |
| 100 - 240 | € 1,577 | € 15,77 |
| 250 - 490 | € 1,508 | € 15,08 |
| 500 + | € 1,404 | € 14,04 |
*prijsindicatie
- RS-stocknr.:
- 217-2638
- Fabrikantnummer:
- IRL3803STRLPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 140A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 9mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 200W | |
| Typical Gate Charge Qg @ Vgs | 140nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Width | 4.83 mm | |
| Height | 15.88mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 140A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 9mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 200W | ||
Typical Gate Charge Qg @ Vgs 140nC | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Width 4.83 mm | ||
Height 15.88mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 30V Single N-Channel IR MOSFET in a D2-Pak package.
Planar cell structure for wide Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100kHz
Industry standard surface-mount power package
High-current carrying capability package (up to 195 A, die-size dependent)
Capable of being wave-soldered
Gerelateerde Links
- Infineon HEXFET Type N-Channel MOSFET, 140 A, 30 V TO-263
- Infineon HEXFET Type N-Channel MOSFET, 45 A, 250 V TO-263
- Infineon HEXFET Type N-Channel MOSFET, 170 A, 75 V TO-263
- Infineon HEXFET Type N-Channel MOSFET, 89 A, 55 V TO-263
- Infineon HEXFET Type N-Channel MOSFET, 162 A, 40 V TO-263
- Infineon HEXFET Type N-Channel MOSFET, 110 A, 60 V TO-263
- Infineon HEXFET Type N-Channel MOSFET, 64 A, 55 V TO-263
- Infineon HEXFET Type N-Channel MOSFET, 270 A, 60 V TO-263