Infineon IPP Type N-Channel MOSFET, 77 A, 55 V Enhancement, 3-Pin TO-220
- RS-stocknr.:
- 217-2564
- Fabrikantnummer:
- IPP77N06S212AKSA2
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 tube van 50 eenheden)*
€ 78,55
(excl. BTW)
€ 95,05
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending 900 stuk(s) vanaf 05 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 - 50 | € 1,571 | € 78,55 |
| 100 - 200 | € 1,257 | € 62,85 |
| 250 - 450 | € 1,194 | € 59,70 |
| 500 - 950 | € 1,131 | € 56,55 |
| 1000 + | € 1,084 | € 54,20 |
*prijsindicatie
- RS-stocknr.:
- 217-2564
- Fabrikantnummer:
- IPP77N06S212AKSA2
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 77A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | IPP | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 12mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 158W | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 77A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series IPP | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 12mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 158W | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon 55V, N-Ch, 12 mΩ max, Automotive MOSFET, TO-220, OptiMOS™.
N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)
100% Avalanche tested
Gerelateerde Links
- Infineon IPP Type N-Channel MOSFET, 77 A, 55 V Enhancement, 3-Pin TO-220 IPP77N06S212AKSA2
- Infineon IPP Type N-Channel MOSFET, 80 A, 55 V Enhancement, 3-Pin TO-220
- Infineon IPP Type N-Channel MOSFET, 80 A, 55 V Enhancement, 3-Pin TO-220 IPP80N06S207AKSA4
- Infineon IPP Type N-Channel MOSFET, 80 A, 55 V Enhancement, 3-Pin TO-220 IPP80N06S2L07AKSA2
- Infineon IPP Type N-Channel MOSFET, -80 A, 100 V Enhancement, 3-Pin TO-220
- Infineon IPP Type N-Channel MOSFET, 201 A, 40 V Enhancement, 3-Pin TO-220
- Infineon IPP Type N-Channel MOSFET, 121 A, 40 V Enhancement, 3-Pin TO-220
- Infineon IPP Type N-Channel MOSFET, 197 A, 40 V Enhancement, 3-Pin TO-220