Infineon IPN Type N-Channel MOSFET, 4 A, 700 V Enhancement, 3-Pin SOT-223 IPN70R1K4P7SATMA1
- RS-stocknr.:
- 217-2546
- Fabrikantnummer:
- IPN70R1K4P7SATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 50 eenheden)*
€ 27,00
(excl. BTW)
€ 32,50
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- Plus verzending 3.000 stuk(s) vanaf 31 augustus 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 50 - 50 | € 0,54 | € 27,00 |
| 100 - 200 | € 0,416 | € 20,80 |
| 250 - 450 | € 0,389 | € 19,45 |
| 500 - 1200 | € 0,362 | € 18,10 |
| 1250 + | € 0,335 | € 16,75 |
*prijsindicatie
- RS-stocknr.:
- 217-2546
- Fabrikantnummer:
- IPN70R1K4P7SATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | IPN | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 6.2W | |
| Typical Gate Charge Qg @ Vgs | 4.7nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 3.7mm | |
| Length | 6.7mm | |
| Height | 1.8mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series IPN | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 6.2W | ||
Typical Gate Charge Qg @ Vgs 4.7nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 3.7mm | ||
Length 6.7mm | ||
Height 1.8mm | ||
Automotive Standard No | ||
The Infineon CoolMOS™ P7 superjunction (SJ) MOSFET is designed to address typical challenges in the low power SMPS market, by offering excellent performance and ease-of-use, enabling improved form factors and price competitiveness. The SOT-223 package is a cost effective one-to-one drop-in alternative to DPAK that also enables footprint reduction in some designs. It can be placed on a typical DPAK footprint and shows comparable thermal performance. This combination makes CoolMOS™ P7 in SOT-223 a perfect fit for its target applications.
Best-fit performance superjunction technology
Cost-effective package solution
Best-in-class price/performance ratio
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