Infineon IPL N-Channel MOSFET, 27 A, 600 V Enhancement, 5-Pin ThinPAK IPL60R125P7AUMA1

RS-stocknr.:: 217-2538
Fabrikantnummer:: IPL60R125P7AUMA1
Fabrikant:: Infineon

Infineon IPL N-Channel MOSFET, 27 A, 600 V Enhancement, 5-Pin ThinPAK IPL60R125P7AUMA1

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€ 11,38

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€ 13,77

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RS-stocknr.:: 217-2538
Fabrikantnummer:: IPL60R125P7AUMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	27A
	Maximum Drain Source Voltage Vds	600V
	Series	IPL
	Package Type	ThinPAK
	Mount Type	Surface
	Pin Count	5
	Maximum Drain Source Resistance Rds	125mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	36nC
	Minimum Operating Temperature	-40°C
	Forward Voltage Vf	900mV
	Maximum Power Dissipation Pd	111W
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	150°C
	Length	8.8mm
	Width	8.8mm
	Standards/Approvals	No
	Height	1.1mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 27A
	Maximum Drain Source Voltage Vds 600V
	Series IPL
	Package Type ThinPAK
	Mount Type Surface
	Pin Count 5
	Maximum Drain Source Resistance Rds 125mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 36nC
	Minimum Operating Temperature -40°C
	Forward Voltage Vf 900mV
	Maximum Power Dissipation Pd 111W
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 150°C
	Length 8.8mm
	Width 8.8mm
	Standards/Approvals No
	Height 1.1mm
	Automotive Standard No

Datasheet - IPL60R125P7AUMA1

Infineon IPL Series MOSFET, 600V Drain Source Voltage, 27A Continuous Drain Current - IPL60R125P7AUMA1

This MOSFET is a high-voltage switching transistor designed for surface-mounted power conversion and control applications. It operates in enhancement mode with an N-type channel and is intended for use where elevated voltage handling and substantial continuous current are required. The device suits thermal environments that span well below freezing to high-temperature operation.

Features and Benefits:

• 600V rating enables high-voltage switching in Compact circuits
• 27A continuous drain current supports sustained load driving
• 0.125Ω RDS(on) minimises conduction losses under load
• 111W power dissipation allows high thermal throughput
• 36nC gate charge balances switching speed and drive requirements

Applications

• Suitable for high-voltage DC-DC converters in industrial systems
• Ideal for motor drive front-ends requiring sustained current
• Can be used for power-factor-correction stages in supplies
• Used with solid-state relays and electronic switching modules
• Suitable for high-temperature power assemblies up to 150°C

What gate drive considerations should I allow for?

The gate requires a drive capable of supplying a typical gate charge of 36nC to achieve expected switching performance while respecting a maximum gate-source voltage of 20V.

How should thermal design account for dissipation?

Thermal layout must accommodate a maximum power dissipation of 111W, using appropriate PCB copper area or thermal vias and heatsinking to maintain junction temperatures within rated limits.

Which package and mounting approach does it use?

It is supplied in a ThinPAK surface-mount package with five pins to facilitate low-inductance connections and Compact board placement.

What are the safe operating temperature limits?

The device functions over a wide range from −40°C up to 150°C, permitting use in both cold-start and elevated-temperature environments.

What voltage and current stresses are permissible on the drain?

The drain may be exposed to a maximum of 600V and a continuous current up to 27A, while ensuring RDS(on) and power dissipation remain within specified values.