Infineon IPD N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin TO-252 IPD60R360P7SAUMA1
- RS-stocknr.:
- 217-2522
- Fabrikantnummer:
- IPD60R360P7SAUMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (2500 eenheden, op een rol van 2500)*
€ 887,50
(excl. BTW)
€ 1.075,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- 2.500 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2500 - 2500 | € 0,355 | € 887,50 |
| 5000 + | € 0,337 | € 842,50 |
*prijsindicatie
- RS-stocknr.:
- 217-2522
- Fabrikantnummer:
- IPD60R360P7SAUMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPD | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 360mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 900mV | |
| Typical Gate Charge Qg @ Vgs | 9.4nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 41W | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.73mm | |
| Height | 2.41mm | |
| Standards/Approvals | No | |
| Width | 6.22mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPD | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 360mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 900mV | ||
Typical Gate Charge Qg @ Vgs 9.4nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 41W | ||
Maximum Operating Temperature 150°C | ||
Length 6.73mm | ||
Height 2.41mm | ||
Standards/Approvals No | ||
Width 6.22mm | ||
Automotive Standard No | ||
Infineon IPD Series MOSFET, 600V Drain Source Voltage, 41W Maximum Power Dissipation - IPD60R360P7SAUMA1
This MOSFET is a high-voltage N‑channel enhancement device designed for switching and power-control applications where elevated drain‑source voltage and moderate current capability are required. It operates across a wide temperature range and is supplied in a surface-mount package suitable for Compact power assemblies.
Features and Benefits:
• 600V drain‑source rating enabling high-voltage switching
• 9A continuous drain current supporting moderate load currents
• 360mΩ Rds(on) minimises conduction losses during operation
• 9.4nC gate charge for reduced switching drive requirements
• 41W power dissipation allowing substantial thermal loading
• 20V gate‑source limit permitting wide gate‑drive ranges
• 9A continuous drain current supporting moderate load currents
• 360mΩ Rds(on) minimises conduction losses during operation
• 9.4nC gate charge for reduced switching drive requirements
• 41W power dissipation allowing substantial thermal loading
• 20V gate‑source limit permitting wide gate‑drive ranges
Applications
• Suitable for high-voltage power converters and inverters
• Used for switch elements in motor-drive stages
• Ideal for industrial power-supply switching duties
• Can be used for half-bridge and clamp circuits
• Used with discrete power assemblies in Compact SMD designs
• Used for switch elements in motor-drive stages
• Ideal for industrial power-supply switching duties
• Can be used for half-bridge and clamp circuits
• Used with discrete power assemblies in Compact SMD designs
What thermal range can this device withstand?
It is specified to operate from −40°C up to 150°C to accommodate harsh thermal environments.
What package type and mounting style are provided?
The device is supplied in a TO‑252 package configured for surface mounting to suit PCB power layouts.
How does the forward voltage affect conduction behaviour?
The forward voltage is 0.9V, which influences low-side conduction drop during forward current flow.
What gate drive limitations must be observed?
Gate‑source voltage must not exceed 20V to prevent gate oxide stress.
How many external connections does it present?
The component has three pins for gate, drain and source connections.
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